Comparison of classical and BEN nucleation studied on thinned Si(111) samples: a HRTEM study

被引：10

作者：

Arnault, JC ^{[1
]}

Pecoraro, S ^{[1
]}

Le Normand, F ^{[1
]}

Werckmann, J ^{[1
]}

机构：

[1] IPCMS, GSI, UMR 7054, F-67034 Strasbourg 2, France

来源：

APPLIED SURFACE SCIENCE | 2003年 / 212卷

关键词：

HRTEM; bias enhanced nucleation; nucleation mechanisms; diamond; HFCVD;

D O I：

10.1016/S0169-4332(03)00086-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The mechanisms involved in the early stages of bias enhanced nucleation (BEN) of diamond have been investigated on thinned Si (1 1 1) areas using several TEM techniques (high resolution, selected area diffraction and nanodiffraction). A comparison with a hot filament chemical vapour deposition synthesis (HFCVD) performed without BEN emphasizes the helpful role of BEN in diamond nucleation: besides the speeding up of the nucleation kinetic and the great increase of the nucleation density,. a significant part of the diamond nuclei are oriented with respect to the Si substrate. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：912 / 919

页数：8

共 18 条

[1] Early stages of the HFCVD process on multi-vicinal silicon surfaces studied by electron microscopy probes (SEM, TEM) [J].