Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide

被引：79

作者：

Kawarada, H ^{[1
]}

Wild, C ^{[1
]}

Herres, N ^{[1
]}

Locher, R ^{[1
]}

Koidl, P ^{[1
]}

Nagasawa, H ^{[1
]}

机构：

[1] HOYA CORP,R&D CTR,AKISHIMA,TOKYO 196,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 08期

关键词：

D O I：

10.1063/1.365047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have deposited epitaxial diamond films with very low angular spread on epitaxial beta-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6 degrees have been determined, which is the smallest value ever reported in heteroepitaxial diamond films and appears to be smaller than those of the beta-phase silicon carbide underlayers. The him surface exhibits a roughness of about 100 nm with very few discernible boundaries due to misorientation. The optimization of the bias-enhanced nucleation process and the control of selective growth are the main factors for the improvement of the crystallinity. (C) 1997 American Institute of Physics.

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页码：3490 / 3493

页数：4

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