Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth

被引：33

作者：

Pawlak, BJ

Vandervorst, W

Smith, AJ

Cowern, NEB

Colombeau, B

Pages, X

机构：

[1] Philips Res Leuven, B-3001 Heverlee, Belgium

[2] IMEC, B-3001 Heverlee, Belgium

[3] Katholieke Univ Leuven, INSYS, Louvain, Belgium

[4] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[5] ASM Int NV, NL-3723 BC Bilthoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1882756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the influence of thermal conditions during solid phase epitaxial regrowth (SPER) on the electrical activation, level of boron in preamorphized silicon,,both with respect to heating ramp rates and the use of low temperature preanneals. Enhancement of electrically active boron concentration by 36% is observed for activation with the fastest ramp rate (487 degrees C/s) compared to the slowest one (1 degrees C/s). An important clustering pathway occurs within the amorphous silicon phase (during low temperature preanneal) prior to completion of the SPER process. In these junctions boron deactivation during isochronal post-annealing is almost independent on the maximum boron activation level. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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