SiO2/AlGaN/GaN MOSHFET with 0.7 μm gate-length and fmax/fT of 40/24 GHz

被引：18

作者：

Bernát, J

Gregusová, D

Heidelberger, G

Fox, A

Marso, M

Lüth, H

Kordos, P

机构：

[1] Res Ctr Julich, Ctr Nanoelect Syst Informat Technol, Inst Thin Films & Interfaces, D-52425 Julich, Germany

[2] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 11期

关键词：

D O I：

10.1049/el:20050556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of SiO2/AlGaN/GaN MOSHFETs is described. The C-V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO2. The devices exhibited gate leakage current of 5 x 10(-10) A/mm. Small-signal RF characterisation of 0.7 mu m gate length devices yielded an f(T) of 24 GHz and an f(max) of 40 GHz, which are comparable to those typical for state-of-the-art AlGaN/GaN HFETs.

引用

收藏

页码：667 / 668

页数：2

相关论文

共 7 条

[1] Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation [J].

Bernát, J ;

Javorka, P ;

Marso, M ;

Kordos, P .

APPLIED PHYSICS LETTERS, 2003, 83 (26) :5455-5457

[2] Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs [J].

Bernát, J ;

Wolter, M ;

Fox, A ;

Marso, M ;

Flynn, J ;

Brandes, G ;

Kordos, P .

ELECTRONICS LETTERS, 2004, 40 (01) :78-80

[3] III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films [J].

Cai, Y ;

Zhou, YG ;

Chen, KJ ;

Lau, KM .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

[4] Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers [J].

Hashizume, T ;

Anantathanasarn, S ;

Negoro, N ;

Sano, E ;

Hasegawa, H ;

Kumakura, K ;

Makimoto, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B) :L777-L779

[5] AlGaN/GaN HEMTs on silicon substrates with fT of 32/20 GHz and fmax of 27/22 GHz for 0.5/0.7 μm gate length [J].

Javorka, P ;

Alam, A ;

Fox, A ;

Marso, M ;

Heuken, M ;

Kordos, P .

ELECTRONICS LETTERS, 2002, 38 (06) :288-289

[6] Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications [J].

Khan, MA ;

Simin, G ;

Yang, JW ;

Zhang, JP ;

Koudymov, A ;

Shur, MS ;

Gaska, R ;

Hu, XH ;

Tarakji, A .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (02) :624-633

[7] AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on SiC substrates [J].

Khan, MA ;

Hu, X ;

Tarakji, A ;

Simin, G ;

Yang, J ;

Gaska, R ;

Shur, MS .

APPLIED PHYSICS LETTERS, 2000, 77 (09) :1339-1341