AlGaAsSb buffer barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability

InAs/AlGaAsSb deep quantum well was successfully formed on GaAs substrate and examined for two electron devices, Hall elements (HEs), and field-effect transistors (FETs). With a thin buffer layer of 600 nm AlGaAsSb on GaAs substrate, we observed high electron mobility more than 23000 cm(2)/Vs and extrinsic effective electron velocity of 2.2 x 10(7) cm/s for a 15 nm thick InAs channel at room temperature. AlGaAsSb lattice matched to InAs was discussed from the view points of insulating property, carrier confinement, and oxidization rate. Reliability data good enough for practical use were also obtained for HEs. We demonstrated AlGaAsSb as a promising buffer/barrier layers for InAs channel devices on GaAs substrate, and we discussed the possible advantages of AlGaAsSb also for InGaAs FETs.