Is ion sputtering always a "Negative Homoepitaxial Deposition"?

被引:71
作者
Costantini, G
de Mongeot, EB
Boragno, C
Valbusa, U
机构
[1] CNR, Ctr CFSBT, INFM, Unita Ric Genova, I-16146 Genoa, Italy
[2] Dipartimento Fis, I-16146 Genoa, Italy
关键词
D O I
10.1103/PhysRevLett.86.838
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a scanning tunneling microscopy study of the direct comparison between homoepitaxial deposition and surface ion sputtering on the Ag(001) system. At a temperature of 200 K, sputtering results in mound formation similar to the epitaxy case, while at higher temperatures an erosive regime sets in with the appearance of regular square pits. Contrary to the conventional wisdom, which considers ion sputtering as a deposition of vacancies, the analysis of single ion impact events reveals that the process produces both adatom and vacancy clusters. The key parameter determining the temperature dependence of surface morphology turns out to be the mobility of the adatom clusters which exceeds that of vacancy clusters.
引用
收藏
页码:838 / 841
页数:4
相关论文
共 24 条
[1]  
ANDERSEN HH, 1991, SPUTTERING PARTICLE, V1
[2]  
Barabasi A-Ls, 1995, FRACTAL CONCEPTS SUR, DOI [10.1017/CBO9780511599798, DOI 10.1017/CBO9780511599798]
[3]   TRANSITION TO MULTILAYER KINETIC ROUGHENING FOR METAL (100) HOMOEPITAXY [J].
BARTELT, MC ;
EVANS, JW .
PHYSICAL REVIEW LETTERS, 1995, 75 (23) :4250-4253
[4]   THEORY OF RIPPLE TOPOGRAPHY INDUCED BY ION-BOMBARDMENT [J].
BRADLEY, RM ;
HARPER, JME .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2390-2395
[5]   Roughening and ripple instabilities on ion-bombarded Si [J].
Carter, G ;
Vishnyakov, V .
PHYSICAL REVIEW B, 1996, 54 (24) :17647-17653
[6]   ROUGHENING INSTABILITY AND EVOLUTION OF THE GE(001) SURFACE DURING ION SPUTTERING [J].
CHASON, E ;
MAYER, TM ;
KELLERMAN, BK ;
MCILROY, DT ;
HOWARD, AJ .
PHYSICAL REVIEW LETTERS, 1994, 72 (19) :3040-3043
[7]   SURFACE ROUGHENING OF GE(001) DURING 200EV XE-ION BOMBARDMENT AND GE MOLECULAR-BEAM EPITAXY [J].
CHASON, E ;
TSAO, JY ;
HORN, KM ;
PICRAUX, ST ;
ATWATER, HA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2507-2511
[8]   SUPPRESSION OF 3-DIMENSIONAL ISLAND NUCLEATION DURING GAAS GROWTH ON SI(100) [J].
CHOI, CH ;
AI, R ;
BARNETT, SA .
PHYSICAL REVIEW LETTERS, 1991, 67 (20) :2826-2829
[9]   A new UHV variable temperature STM for gas adsorption studies [J].
Conti, R ;
Rusponi, S ;
Pagnotta, D ;
Boragno, C ;
Valbusa, U .
VACUUM, 1997, 48 (7-9) :639-641
[10]   Temperature dependent reentrant smooth growth in Ag(001) homoepitaxy [J].
Costantini, G ;
de Mongeot, FB ;
Boragno, C ;
Valbusa, U .
SURFACE SCIENCE, 2000, 459 (03) :L487-L492