Passivation of the GaAs(100) surface with a vapor-deposited GaS film

被引:12
作者
Cao, XA [1 ]
Hu, HT [1 ]
Ding, XM [1 ]
Yuan, ZL [1 ]
Dong, Y [1 ]
Chen, XY [1 ]
Lai, B [1 ]
Hou, XY [1 ]
机构
[1] Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 05期
关键词
D O I
10.1116/1.590251
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A vapor-deposited GaS passivating layer is formed on GaAs(100) with alpha-Ga2S3 powder used as a single-source precursor for the deposition. The films grown show near-single-crystal quality, and are characterized by Auger electron spectroscopy and x-ray diffraction spectroscopy. The band-edge discontinuities of the GaS/GaAs heterojunction are determined to be 1.9 eV for the valence band and 0.3 eV for the conduction band, respectively, by ultraviolet photoelectron spectroscopy and electron-energy-loss spectroscopy. It is also observed that the valence-band structure of the GaS overlayer becomes much sharper after annealing. (C) 1998 American Vacuum Society. [S0734-211X(98)04205-X].
引用
收藏
页码:2656 / 2659
页数:4
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