Chemical amplification resists for microlithography

被引：518

作者：

Ito, H ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

MICROLITHOGRAPHY - MOLECULAR IMPRINTING | 2005年 / 172卷

关键词：

D O I：

10.1007/b97574

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

This chapter describes polymers employed in formulation of chemically amplified resists for microlithography, which have become the workhorse in device manufacturing for the last few years and are continuing to be imaging materials of choice for a few more generations. The primary focus is placed on chemistries that are responsible for their lithographic imaging. Furthermore, innovations in the polymer design and processing that have supported the evolution of photolithography and advancement of the microelectronics technology are described. The topics covered in this chapter include the history, rapid development in the last 20 years, the current status, and the future perspective of chemical amplification resists.

引用

页码：37 / 245

页数：209

共 643 条

[51]

Byers J., 1998, Journal of Photopolymer Science and Technology, V11, P465, DOI 10.2494/photopolymer.11.465

[52] SOLID-STATE QUANTUM YIELD DETERMINATION OF A NOVEL BASE PHOTOGENERATOR [J].

CAMERON, JF ;

FRECHET, JMJ .

JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY, 1991, 59 (01) :105-113

[53] BASE CATALYSIS IN IMAGING MATERIALS .1. DESIGN AND SYNTHESIS OF NOVEL LIGHT-SENSITIVE URETHANES AS PHOTOPRECURSORS OF AMINES [J].

CAMERON, JF ;

FRECHET, JMJ .

JOURNAL OF ORGANIC CHEMISTRY, 1990, 55 (23) :5919-5922

[54] PHOTOGENERATION OF ORGANIC-BASES FROM ORTHO-NITROBENZYL-DERIVED CARBAMATES [J].

CAMERON, JF ;

FRECHET, JMJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1991, 113 (11) :4303-4313

[55]

CAMERON JF, 1997, P 10 INT C PHOT PRIN, P120

[56]

Chiba T., 2000, Journal of Photopolymer Science and Technology, V13, P657, DOI 10.2494/photopolymer.13.657

[57] Investigation of a fluorinated ESCAP based resist for 157 nm lithography [J].

Cho, S ;

Klauck-Jacobs, A ;

Yamada, S ;

Xu, CB ;

Leonard, J ;

Zampini, A .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 :522-532

[58] Negative tone 193 nm resists [J].

Cho, SS ;

Vander Heyden, A ;

Byers, J ;

Willson, CG .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 :62-73

[59] Design and properties of new deep-UV positive photoresist [J].

Choi, SJ ;

Jung, SY ;

Kim, CH ;

Park, CG ;

Han, WS ;

Koh, YB ;

Lee, MY .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII, 1996, 2724 :323-331

[60] Design and synthesis of new photoresist materials for ArF lithography [J].

Choi, SJ ;

Kim, HW ;

Woo, SG ;

Moon, JT .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 :54-61

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