Growth morphology and magnetism of MnAs/GaAs(001) epilayers

被引：5

作者：

Etgens, VH

Eddrief, M

Mosca, DH

Marangolo, M

George, JM

机构：

[1] Univ Paris 06 & Paris 07, LMCP, Lab Mineral Cristallogaphite, F-75252 Paris 06, France

[2] DF UFPR, LSI LANSEN, Ctr Politecn, BR-81531990 Curitiba, Parana, Brazil

[3] Thomson CSF, CNRS, Unite Mixte Phys, F-91404 Orsay, France

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2001年 / 226卷 / PART II期

关键词：

semiconductors-ferromagnetic; heterostructures; tunneling;

D O I：

10.1016/S0304-8853(01)00009-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MnAs grows epitaxially on GaAs(001) through formation of top-flat islands, with sharp sloping sidewalls aligned with the GaAs [1 (1) over bar0] and [110] directions. Magnetization measurements indicate that the easy axis of the MnAs thin films is in-plane, along the [(1) over bar(1) over bar 20] direction. The easy axis is aligned with [110] of GaAs, whatever the first monolayer of Mn was deposited on d(4x4) or (2x1)-Se reconstructed surfaces. (C) 2001 Elsevier Science BY. All rights reserved.

引用

收藏

页码：1577 / 1579

页数：3

相关论文

共 10 条

[1] ON THE RELATIONS BETWEEN STRUCTURE AND MORPHOLOGY OF CRYSTALS .1. [J].

HARTMAN, P ;

PERDOK, WG .

ACTA CRYSTALLOGRAPHICA, 1955, 8 (01) :49-52

[2] Surface reconstructions of MnAs grown on GaAs(001) [J].

Kästner, M ;

Schippan, F ;

Schützendübe, P ;

Däweritz, L ;

Ploog, KH .

SURFACE SCIENCE, 2000, 460 (1-3) :144-152

[3] HYBRID FERROMAGNETIC-SEMICONDUCTOR STRUCTURES [J].

PRINZ, GA .

SCIENCE, 1990, 250 (4984) :1092-1097

[4] Kinetics of MnAs growth on GaAs(001) and interface structure [J].

Schippan, F ;

Trampert, A ;

Däweritz, L ;

Ploog, KH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04) :1716-1721

[5] Growth control of MnAs on GaAs(001) by reflection high-energy electron diffraction [J].

Schippan, F ;

Kästner, M ;

Däweritz, L ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 2000, 76 (07) :834-836

[6] EPITAXIAL FERROMAGNETIC THIN-FILMS AND SUPERLATTICES OF MN-BASED METALLIC COMPOUNDS ON GAAS [J].

TANAKA, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 31 (1-2) :117-125

[7] EPITAXIAL FERROMAGNETIC MNAS THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS - STRUCTURE AND MAGNETIC-PROPERTIES [J].

TANAKA, M ;

HARBISON, JP ;

PARK, MC ;

PARK, YS ;

SHIN, T ;

ROTHBERG, GM .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) :6278-6280

[8] Epitaxial growth and properties of MnAs/GaAs/MnAs trilayer heterostructures [J].

Tanaka, M ;

Saito, K ;

Goto, M ;

Nishinaga, T .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 198-99 :719-721

[9] EPITAXIAL ORIENTATION AND MAGNETIC-PROPERTIES OF MNAS THIN-FILMS GROWN ON (001) GAAS - TEMPLATE EFFECTS [J].

TANAKA, M ;

HARBISON, JP ;

PARK, MC ;

PARK, YS ;

SHIN, T ;

ROTHBERG, GM .

APPLIED PHYSICS LETTERS, 1994, 65 (15) :1964-1966

[10] The effect of S- and Se-passivation on MBE growth of MnAs thin films on GaAs(100) substrates [J].

Uragami, T ;

Ono, K ;

Mizuguchi, M ;

Fujioka, H ;

Tanaka, M ;

Oshima, M .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :561-565