Analysis of decomposed layer appearing on the surface of barium strontium titanate

被引：41

作者：

Fujisaki, Y ^{[1
]}

Shimamoto, Y ^{[1
]}

Matsui, Y ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 1AB期

关键词：

BST; XPS; decomposition; nitric acid; surface treatment; humidity;

D O I：

10.1143/JJAP.38.L52

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemical states and structures of thin degenerated layers grown on the surface of (Ba, Sr)TiO3 (BST) films are investigated by X-ray photoelectron spectroscopy (XPS). It was found that decomposition occurred as a result of the air exposure and also as a result of annealing. A careful study of a Ba 3d peak in the XPS spectrum reveals that Ba in BST crystal easily decomposes out of the perovskite phase and makes BaCO3 or barium oxides, whereas no significant change occurs in Sr, or Ti oxides. This degenerated layer can be removed by nitric acid treatment. It was also found that the surface BST becomes rather stable against exposure to air compared with the original one after the nitric acid treatment.

引用

页码：L52 / L54

页数：3

共 7 条

[1] Analysis and control of surface degenerated layers grown on thin Pb(Zr, Ti)O-3 films [J].

Fujisaki, Y ;

Torii, K ;

Hiratani, M ;

KushidaAbdelghafar, K .

APPLIED SURFACE SCIENCE, 1997, 108 (03) :365-369

[2] A novel BST storage capacitor node technology using platinum electrodes for Gbit DRAMs [J].

Khamankar, RB ;

Kressley, MA ;

Visokay, MR ;

Moise, T ;

Xing, G ;

Nemoto, S ;

Okuno, Y ;

Fang, SJ ;

Wilson, AM ;

Gaynor, JF ;

Hurd, TQ ;

Crenshaw, DL ;

Summerfelt, S ;

Colombo, L .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :245-248

[3]

Lee BT, 1997, INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, P249, DOI 10.1109/IEDM.1997.650374

[4]

SEATH MP, 1979, SURF INTERFACE ANAL, V1, P2

[5] XPS SPECTRA OF CA, SR, BA AND THEIR OXIDES [J].

VANDOVEREN, H ;

VERHOEVEN, JAT .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1980, 21 (03) :265-273

[6] A stacked capacitor with an MOCVD-(Ba,Sr)TiO3 film and a RuO2/Ru storage node on a TiN-capped plug for 4 Gbit DRAMs and beyond [J].

Yamaguchi, H ;

Iizuka, T ;

Koga, H ;

Takemura, K ;

Sone, S ;

Yabuta, H ;

Yamamichi, S ;

Lesaicherre, PY ;

Suzuki, M ;

Kojima, Y ;

Nakajima, K ;

Kasai, N ;

Sakuma, T ;

Kato, Y ;

Miyasaka, Y ;

Yoshida, M ;

Nishimoto, S .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :675-678

[7]

Yuuki A, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P115, DOI 10.1109/IEDM.1995.497195

← 1 →