Numerical studies of conductivity and Fano factor in disordered graphene

被引：125

作者：

Lewenkopf, C. H. ^{[1
,2
]}

Mucciolo, E. R. ^{[3
]}

Castro Neto, A. H.

机构：

[1] Univ Estado Rio de janerio, Dept Fis Teor, BR-20550900 Rio De Janeiro, Brazil

[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[3] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.77.081410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using the recursive Green's function method, we study the problem of electron transport in a disordered single-layer graphene sheet. The conductivity is of order e(2)/h and its dependence on the carrier density has a scaling form that is controlled solely by the disorder strength and the ratio between the sample size and the correlation length of the disorder potential. The shot noise Fano factor is shown to be nearly density independent for sufficiently strong disorder, with a narrow structure appearing at the neutrality point only for weakly disordered samples. Our results are in good agreement with experiments and provide a way for extracting microscopic information about the magnitude of extrinsic disorder in graphene.

引用

页数：4

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