60-GHz LNA using a hybrid transmission line and conductive path to ground technique in silicon

A monolithic 60GHz low-noise amplifier (LNA) using a passive noise suppression technique and an enhanced hybrid transmission line structure, fabricated in a 0.12 mu m SiGe BiCMOS process is presented. This design provides the entire circuit with a conductive path to ground the P- substrate. Near active device regions, noise injection and crosstalk paths are shunted to ground. Measurements of the single-stage LNA show peak performance at 59GHz exhibiting a gain of 14.5dB, a NF of 4.1dB, a +1.5dBm output compression point, while consuming 4.5mA from a 1.8v supply. Across the entire V-band (57 - 64GHz), the LNA provides a minimum gain of 12dB with an average noise figure of 5dB. This LNA has the highest known figure of merit reported for a 60GHz application.