Application of aluminum films as temperature sensors for the compensation of output thermal shift of silicon piezoresistive pressure sensors

被引：26

作者：

Stankevic, V ^{[1
]}

Simkevicius, C ^{[1
]}

机构：

[1] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 71卷 / 03期

关键词：

piezoresistive pressure sensors; temperature sensors; temperature compensation; aluminum films;

D O I：

10.1016/S0924-4247(98)00178-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminum thin film resistors are proposed for use as temperature sensors for the compensation of the thermal sensitivity and offset shift of pressure sensor output. An experimental investigation of Al films with different thicknesses and heat treatment was carried out in order to optimize the electric parameters of such temperature resistors. It was found that films with a thickness 1.2 mu m and thermal etched at 330 degrees C for 72 h have good long-time stability, a specific resistance of 2.85 mu Omega cm and a temperature coefficient of resistance of 4.33 x 10(-3)/degrees C. Th, obtained results indicate that Al resistors can be used in an electrical circuit for the passive temperature compensation of the thermal shift of pressure sensor output within a temperature range of up to 125 degrees C. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：161 / 166

页数：6

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