Atomic-level control during film growth under highly kinetically constrained conditions:: H mediation and ultrahigh doping during Si1-xGex gas-source epitaxy

被引：15

作者：

Greene, JE ^{[1
]}

机构：

[1] Univ Illinois, Dept Energy, Frederick Seitz Mat Red Lab, Chicago, IL 60680 USA

来源：

MRS BULLETIN | 2001年 / 26卷 / 10期

关键词：

D O I：

10.1557/mrs2001.205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：777 / 789

页数：13

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