OH radical activation of ZnO growth in remote plasma metalorganic chemical vapor deposition

被引：10

作者：

Nakamura, A

Shigemori, S

Shimizu, Y

Aoki, T

Tanaka, A

Temmyo, J

机构：

[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan

[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 7A期

关键词：

ZnO; remote plasma; MOCVD; optical spectroscopy; OH radicals;

D O I：

10.1143/JJAP.42.L775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A possible role of OH radicals in the formation mechanism of ZnO thin films by remote plasmaenhanced metalorganic chemical vapor deposition (RPE-MOCVD) was investigated. The plasma was generated by a radio frequency discharge in O-2. The change of the carrier gas from H-2 to N-2 resulted in a significant decrease in deposition rate. Moreover, growth rate changed also with the content of H-2 of an oxygen-hydrogen mixture gas in a reactor. Optical spectroscopic investigation of the light emitted by the reactor gas in the vicinity of a substrate showed that the effect of the carrier gas on deposition rate is related to the occurrence of OH radicals.

引用

收藏

页码：L775 / L777

页数：3

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