Fabrication of nanoscale heterostructure devices with a focused ion beam microscope

被引：64

作者：

Bell, C ^{[1
]}

Burnell, G

Kang, DJ

Hadfield, RH

Kappers, MJ

Blamire, MG

机构：

[1] Univ Cambridge, Dept Mat Sci, IRC Nanotechnol, Cambridge CB2 3QZ, England

[2] Univ Cambridge, Dept Mat Sci, Irc Superconduct, Cambridge CB2 3QZ, England

来源：

NANOTECHNOLOGY | 2003年 / 14卷 / 06期

关键词：

D O I：

10.1088/0957-4484/14/6/312

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A focused ion beam (FIB) microscope has been used to fabricate junctions with dimensions in the range 100-5000 nm by three-dimensional etching. We have applied this process to a variety of structures, including current-perpendicular-to-plane giant-magnetoresistive multilayer devices, superconductor-metal-superconductor Josephson junctions, where the metal is Mo, Co, or a CuxNi1-x alloy, and GaN light-emitting diodes. In addition, Tl2Ba2CaCu2O8 intrinsic Josephson junctions were also fabricated and characterized. The flexibility of the FIB technique allowed junctions of many different materials and heterostructures to be fabricated with the same process.

引用

页码：630 / 632

页数：3

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