Growth of ultralong ZnO nanowires on silicon substrates by vapor transport and their use as recyclable photocatalysts

被引：268

作者：

Kuo, Tz-Jun ^{[1
]}

Lin, Chun-Neng ^{[1
]}

Kuo, Chi-Liang ^{[1
]}

Huang, Michael H. ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Chem, Hsinchu 30013, Taiwan

来源：

CHEMISTRY OF MATERIALS | 2007年 / 19卷 / 21期

关键词：

D O I：

10.1021/cm071568a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the growth of ultralong ZnO nanowires on silicon (100) substrates via the gold-catalyzed vapor transport approach. An ample supply of zinc vapor generated through carbothermal reduction of ZnO powder at 917 degrees C and a suitable amount of oxygen facilitate the rapid growth of nanowires. These ZnO nanowires are extremely long with lengths of 85 - 1 00,mu m, and exhibit an overall vertical orientation. The nanowires have largely diameters of 250-400 nm. Crystal structure analysis indicates typical ZnO nanowire growth along the [0001] direction. The band gap of these nanowires was determined to be 3.22 eV. These nanowires show a relatively weak near-band-edge emission peak at 390 nm, and a significant oxygen vacancy-related emission band at 495 nm. Good photocatalytic activity of these nanowires on substrates toward the photodegradation of rhodamine B and 4-chlorophenol was demonstrated. Furthermore, we showed that these nanowires on substrates can serve as effective and convenient recyclable photocatalysts. Only a slight decrease in the photodecomposition rate was observed after 10 cycles of the photocatalysis experiment. The photocatalysts also work well under natural sunlight.

引用

页码：5143 / 5147

页数：5

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