Fabrication of [110]-aligned Si quantum wires embedded in SiO2 by low-energy oxygen implantation

被引：3

作者：

Ishikawa, Y

Shibata, N

Fukatsu, S

机构：

[1] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi, Japan

[2] Univ Tokyo, Dept Pure & Appl Sci, Meguro Ku, Tokyo 1538902, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 147卷 / 1-4期

基金：

日本科学技术振兴机构;

关键词：

silicon; quantum wires; SIMOX; TEM;

D O I：

10.1016/S0168-583X(98)00539-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Si quantum wires (QWRs) embedded in SiO2 are successfully fabricated by low-energy oxygen implantation on a V-groove patterned substrate. Si QWRs aligned to [1 1 0] appeared at the bottom-center of the V-groove. The [1 1 0] cross-section of the Si QWR is a hexagon encompassed by four Si {1 1 1} and two Si {0 0 1} lateral facets. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：304 / 309

页数：6

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