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Creation of highly-ordered Si nanocrystal dots suspended in SiO2 by molecular beam epitaxy with low energy oxygen implantation

被引：7
作者：
Ishikawa, Y
Shibata, N
Fukatsu, S
机构：
[1] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 456, Japan
[2] Univ Tokyo, Dept Pure & Appl Sci, Meguro Ku, Tokyo 153, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6B期
关键词：
quantum dot; Si nanocrystal; suspended in SiO2; SIMOX; SOI; MBE;
D O I：
10.1143/JJAP.36.4035
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low energy oxygen implantation during Si molecular beam epitaxy (MBE) allows the formation of highly-oriented Si nanocrystal dots (NCDs) suspended in SiO2. Transmission electron microscopy reveals the unusual facet morphology of NCD while the spontaneous orientation of the crystal axis of NCD toward [100] is clearly observed. well-developed {100} and {111} facets are characterized by nearly perfect Si/SiO2 interfaces. Compelling evidence is found for the epitaxial origin of NCD inherited from the parental two-dimensional Si slabs.
引用
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页码：4035 / 4037
页数：3
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