Epitaxy-ready Si/SiO2 Bragg reflectors by multiple separation-by-implanted oxygen

被引：24

作者：

Ishikawa, Y ^{[1
]}

Shibata, N ^{[1
]}

Fukatsu, S ^{[1
]}

机构：

[1] UNIV TOKYO, DEPT PURE & APPL SCI, MEGURO KU, TOKYO 153, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 25期

关键词：

D O I：

10.1063/1.117557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Si substrate purposely grown for Si-based optoelectronic applications is described in this letter. The structure contains a built-in Si/SiO2 Bragg reflector which is prepared by multiple separation-by-implanted-oxygen technique, where in situ low energy oxygen ion implantation is performed on molecular beam deposited Si to create alternating Si/S-2 epitaxial bilayers. The quality of the top Si layer was confirmed to be epitaxy-ready after cross-sectional transmission electron microscopy. Maximum reflectance at near normal incidence was over 90% for bilayer periods of 4 to 5. (C) 1996 American Institute of Physics.

引用

页码：3881 / 3883

页数：3

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