Highly oriented Si nanoparticles in SiO2 created by Si molecular beam epitaxy with oxygen implantation

被引:10
作者
Ishikawa, Y
Shibata, N
Fukatsu, S
机构
[1] UNIV TOKYO,DEPT PURE & APPL SCI,MEGURO KU,TOKYO 153,JAPAN
[2] JAPAN FINE CERAM CTR,ATSUTA KU,NAGOYA,AICHI 456,JAPAN
关键词
nanoparticles; silicon;
D O I
10.1016/S0040-6090(96)09215-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A novel Si nanoparticle (SNP) system of spatially coherent distribution was created by low energy oxygen ion implantation during Si molecular beam epitaxy. Highly oriented Si nanoparticles embedded in an SiO2 matrix of dimensions d of 4-100 nm with log-normal size distribution are demonstrated. The single-crystal character of the SNPs is revealed by transmission electron microscopy and the preferred crystalline axis is oriented to the substrate normal, [100], retaining the epitaxial character compared with dispersive SNPs. The morphology of individual nanoparticles is significantly faceted towards [100] and [111] as opposed to regular polyhedra with the crystal habit of [311], [111] characteristic of thermodynamically stabilized dispersive SNPs, Visible luminescence bands are observed at room temperature.
引用
收藏
页码:227 / 230
页数:4
相关论文
共 25 条
[1]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[2]   QUANTUM CONFINEMENT IN SI NANOCRYSTALS [J].
DELLEY, B ;
STEIGMEIER, EF .
PHYSICAL REVIEW B, 1993, 47 (03) :1397-1400
[3]   ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS [J].
DIMARIA, DJ ;
KIRTLEY, JR ;
PAKULIS, EJ ;
DONG, DW ;
KUAN, TS ;
PESAVENTO, FL ;
THEIS, TN ;
CUTRO, JA ;
BRORSON, SD .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :401-416
[4]   PHOTOLUMINESCENCE OF OXIDIZED SILICON NANOCLUSTERS DEPOSITED ON THE BASAL-PLANE OF GRAPHITE [J].
DINH, LN ;
CHASE, LL ;
BALOOCH, M ;
TERMINELLO, LJ ;
WOOTEN, F .
APPLIED PHYSICS LETTERS, 1994, 65 (24) :3111-3113
[5]   OPTOELECTRONIC ASPECTS OF STRAINED SI1-XGEX/SI QUANTUM-WELLS [J].
FUKATSU, S .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1995, 6 (05) :341-349
[6]   LOG-NORMAL SIZE DISTRIBUTIONS OF ULTRAFINE METAL PARTICLES [J].
GRANQVIST, CG ;
BUHRMAN, RA .
SOLID STATE COMMUNICATIONS, 1976, 18 (01) :123-126
[7]   ULTRAFINE METAL PARTICLES [J].
GRANQVIST, CG ;
BUHRMAN, RA .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :2200-2219
[8]   PREPARATION OF MULTILAYERED THIN SILICON-ON-INSULATOR STRUCTURE BY LOW-ENERGY OXYGEN ION-IMPLANTATION [J].
ISHIKAWA, Y ;
SHIBATA, N .
APPLIED PHYSICS LETTERS, 1992, 61 (13) :1543-1545
[9]   EFFECTS OF SUBSTRATE-TEMPERATURE AND ION CURRENT-DENSITY ON THE STRUCTURE OF SILICON-ON-INSULATOR MATERIAL IMPLANTED WITH LOW-ENERGY OXYGEN [J].
ISHIKAWA, Y ;
SHIBATA, N .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (09) :1291-1298
[10]   FORMATION MECHANISMS OF DISLOCATION AND SI ISLAND IN LOW-ENERGY SIMOX [J].
ISHIKAWA, Y ;
SHIBATA, N .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 91 (1-4) :520-524