Evidence of stacking-fault distribution along an InAs nanowire using micro-focused coherent X-ray diffraction

被引：24

作者：

Chamard, Virginie ^{[1
]}

Stangl, Julian ^{[2
]}

Labat, Stephane ^{[1
]}

Mandl, Bernhard ^{[3
]}

Lechner, Rainer T. ^{[2
]}

Metzger, Till H. ^{[4
]}

机构：

[1] Univ P Cezanne Aix Marseille III, CNRS, UMR 6122, TECSEN, F-13397 Marseille 20, France

[2] Johannes Kepler Univ Linz, Inst Semiconductor Phys, A-4040 Linz, Austria

[3] Lund Univ, S-22100 Lund, Sweden

[4] ESRF, F-38043 Grenoble, France

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 2008年 / 41卷

基金：

奥地利科学基金会;

关键词：

D O I：

10.1107/S0021889808001167

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

InAs nanowire samples grown by metal-organic chemical vapor deposition present a significant amount of wurtzite structure, while the zincblende lattice is known to be the stable crystal structure for the bulk material. The question of the wurtzite distribution in the sample is addressed using phase-sensitive coherent X-ray diffraction with a micro-focused beam at a synchrotron source. The simultaneous investigation of the wurtzite 10 (1) over bar0, 10 (2) over bar0, 10 (3) over bar0 reflections performed on a bunch of single wires shows unambiguously that the wurtzite contribution is a result of stacking faults distributed along the wire. Additional simulations lead to adjustments of the wire structural parameters, such as the wurtzite content, the strain distribution, the wire diameters and their respective orientations.

引用

页码：272 / 280

页数：9

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