A spectroscopic ellipsometry study on the variation of the optical constants of tin-doped indium oxide thin films during crystallization

被引:30
作者
Jung, YS [1 ]
机构
[1] Samsung Corning, Ctr Res & Dev, Gumi 730725, Kyoung Buk, South Korea
关键词
thin films; optical properties; light absorption and reflection;
D O I
10.1016/j.ssc.2003.11.044
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this paper. the variation of the optical constants of tin-doped indium oxide thin films during thermal treatment was explored using spectroscopic ellipsometry based on appropriate analysis models combining a Drude absorption edge and Lorentz oscillators. It was found that the refractive indices and the extinction coefficients show different behaviors depending on depth, thermal treatment time and temperature. The optical constants varied more abruptly in the lower part of the films, which confirms the model that crystallization starts from the film-substrate interface. Hall measurement showed that the significant increase in the extinction coefficients in the near infrared range is due to the increased number of free electrons. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:491 / 495
页数:5
相关论文
共 28 条
[11]   Ion-beam-deposited ultrathin transparent metal contacts [J].
Klauk, H ;
Huang, JR ;
Nichols, JA ;
Jackson, TN .
THIN SOLID FILMS, 2000, 366 (1-2) :272-278
[12]   Dependence of the sheet resistance of indium-tin-oxide thin films on grain size and grain orientation determined from X-ray diffraction techniques [J].
Kulkarni, AK ;
Schulz, KH ;
Lim, TS ;
Khan, M .
THIN SOLID FILMS, 1999, 345 (02) :273-277
[13]   Ex situ ellipsometry characterization of excimer laser annealed amorphous silicon thin films grown by low pressure chemical vapor deposition [J].
Kuo, CH ;
Hsieh, IC ;
Schroder, DK ;
Maracas, GN ;
Chen, S ;
Sigmon, TW .
APPLIED PHYSICS LETTERS, 1997, 71 (03) :359-361
[14]   Interrelation between nanostructure and optical properties of oxide thin films by spectroscopic ellipsometry [J].
Losurdo, M ;
Barreca, D ;
Capezzuto, P ;
Bruno, G ;
Tondello, E .
SURFACE & COATINGS TECHNOLOGY, 2002, 151 (151-152) :2-8
[15]   Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry:: Substrate interfacial reactivity [J].
Losurdo, M ;
Giangregorio, M ;
Capezzuto, P ;
Bruno, G ;
De Rosa, R ;
Roca, F ;
Summonte, C ;
Plá, J ;
Rizzoli, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (01) :37-42
[16]   Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices [J].
Massoud, HZ ;
Przewlocki, HM .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) :2202-2206
[17]   Indium-tin-oxide thin film prepared by microwave-enhanced d.c. reactive magnetron sputtering for telecommunication wavelengths [J].
Meng, LJ ;
Crossan, E ;
Voronov, A ;
Placido, F .
THIN SOLID FILMS, 2002, 422 (1-2) :80-86
[18]   Structural and electrical properties of In2O3:Sn films prepared by radio-frequency sputtering [J].
Mergel, D ;
Schenkel, M ;
Ghebre, M ;
Sulkowski, M .
THIN SOLID FILMS, 2001, 392 (01) :91-97
[19]   Crystal growth of ITO films prepared by DC magnetron sputtering on C film [J].
Morikawa, H ;
Sumi, H ;
Kohyama, M .
THIN SOLID FILMS, 1996, 281 :202-205
[20]   Crystallization and decrease in resistivity on heat treatment of amorphous indium tin oxide thin films prepared by dc magnetron sputtering [J].
Morikawa, H ;
Fujita, M .
THIN SOLID FILMS, 1999, 339 (1-2) :309-313