Laser-induced fluorescence measurements of absolute SiH densities in SiH4-H2 RF discharges and comparison with a numerical model

被引：8

作者：

Hertl, M ^{[1
]}

Dorval, N ^{[1
]}

Leroy, O ^{[1
]}

Jolly, J ^{[1
]}

Pealat, M ^{[1
]}

机构：

[1] ONERA, CNRS, Lab PRIAM, Unite Mixte Rech, F-91761 Palaiseau, France

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 1998年 / 7卷 / 02期

关键词：

D O I：

10.1088/0963-0252/7/2/006

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Laser-induced fluorescence spectroscopy is used to measure spatia[ly resolved SiH radical densities in pure SiH4 and SiH4/H-2 radio-frequency glow discharges devoted to amorphous silicon thin-film deposition. Absolute density calibration is achieved by a Rayleigh scattering measurement in N-2 Typical SiH densities of same 10(10) cm(-3) are measured on the plasma axis with a detection limit of similar to 10(9) cm(-3). The experimental results are compared to the SiH densities calculated by a two-dimensional numerical model or the SiH4/H-2 plasma. A good agreement is found both in hydrogen-diluted and pure silane plasmas.

引用

页码：130 / 135

页数：6

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