In-catalyzed growth of high-purity indium oxide nanowires

被引：27

作者：

Calestani, Davide ^{[1
]}

Zha, Mingzheng ^{[1
]}

Zappettini, Andrea ^{[1
]}

Lazzarini, Laura ^{[1
]}

Zanotti, Lucio ^{[1
]}

机构：

[1] IMEM CNR Inst, I-43100 Parma, Italy

来源：

CHEMICAL PHYSICS LETTERS | 2007年 / 445卷 / 4-6期

关键词：

D O I：

10.1016/j.cplett.2007.07.089

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium oxide (In2O3) nanowires have been recently synthetized and interesting properties and applications in gas-sensors and optoelectronic fields have been suggested. In order to reduce as much as possible the influence of undesired dopants and/or impurities on the observed properties, In2O3 nanowires have been grown without the use of catalysts, directly from metallic indium by a vapor transport technique and a controlled oxidation with oxygen-argon mixtures. Depending on the growth conditions (temperature, vapor pressure, oxygen concentration, etc.) different results have been achieved and it has been observed that a 'proper' In condensation on the substrates may enhance the nanowires growth. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：251 / 254

页数：4

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