High-speed, high-accuracy optical measurements of polycrystalline silicon for process control

被引：5

作者：

Benson, TE ^{[1
]}

Ramamoorthy, A ^{[1
]}

Kamlet, LI ^{[1
]}

Terry, FL ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

THIN SOLID FILMS | 1998年 / 313卷

关键词：

surface roughness; polycrystalline silicon; etch rate monitoring; process control;

D O I：

10.1016/S0040-6090(97)00860-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly accurate non-contact polycrystalline silicon (poly-Si) film thickness measurements are important for both real-time feedback control and run-to-run control. Both spectroscopic ellipsometry (SE) and normal-incidence spectral reflectometry (SR) are complicated by poly-Si surface effects and variable bulk poly-Si refractive indices. In this article we will describe an empirical modification of Beckmann/Kirchhoff scattering theory to account for the effects of rough layers in SR. We will present results from in situ monitoring of reactive ion etching of poly-Si/SiO2/Si and ex situ comparisons to TEM and AFM. Preliminary conclusions on the applications of this model to SE analysis of poly-Si will also be presented. (C) 1998 Elsevier Science S.A.

引用

页码：435 / 441

页数：7

共 14 条

[1]

AZZAM RMA, 1987, ELLIPSOMETRY POLARIZ, P286

[2]

BENSON T, 1996, THESIS U MICHIGAN

[3] Sensor systems for real-time feedback control of reactive ion etching [J].

Benson, TE ;

Kamlet, LI ;

Ruegsegger, SM ;

Hanish, CK ;

Hanish, PD ;

Rashap, BA ;

Klimecky, P ;

Freudenberg, JS ;

Grizzle, JW ;

Khargonekar, PP ;

Terry, FL ;

Barney, B .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01) :483-488

[4] In-situ spectroscopic reflectometry for polycrystalline silicon thin film etch rate determination during reactive ion etching [J].

Benson, TE ;

Kamlet, LI ;

Klimecky, P ;

Terry, FL .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (06) :955-964

[5] Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor [J].

Borghesi, A ;

Giardini, ME ;

Marazzi, M ;

Sassella, A ;

DeSanti, G .

APPLIED PHYSICS LETTERS, 1997, 70 (07) :892-894

[6] SCALAR SCATTERING THEORY FOR MULTILAYER OPTICAL COATINGS [J].

CARNIGLIA, CK .

OPTICAL ENGINEERING, 1979, 18 (02) :104-115

[7] OPTICAL FUNCTIONS OF CHEMICAL-VAPOR-DEPOSITED THIN-FILM SILICON DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY [J].

JELLISON, GE ;

CHISHOLM, MF ;

GORBATKIN, SM .

APPLIED PHYSICS LETTERS, 1993, 62 (25) :3348-3350

[8]

JELLISON GE, 1993, MAT RES S C, V283, P561

[9] SURFACE-ROUGHNESS AND GRAIN-BOUNDARY EFFECTS ON THE OPTICAL-PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON THIN-FILMS BY SPECTROSCOPIC ELLIPSOMETRY [J].

LOGOTHETIDIS, S .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) :2416-2426

[10] Optical characterization of polycrystalline silicon thin films [J].

McGahan, WA ;

Spady, BR ;

Johs, BD ;

Laparra, O .

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY X, 1996, 2725 :450-459

← 1 2 →