Observation of RHEED rocking curves during Si/Si(111) film growth

被引:10
作者
Shigeta, Y
Fukaya, Y
Mitsui, H
Nakamura, K
机构
[1] Yokohama City Univ, Fac Sci, Kanazawa Ku, Yokohama, Kanagawa 236, Japan
[2] Yokohama City Univ, Grad Sch Integrated Sci, Kanazawa Ku, Yokohama, Kanagawa 236, Japan
关键词
diffusion and migration; molecular beam epitaxy; reflection high-energy electron diffraction; silicon; surface morphology;
D O I
10.1016/S0039-6028(97)01059-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In order to study the growth mechanism of Si/Si(111), we have measured the rocking curves of reflection high-energy electron diffraction (RHEED) during the growth by using a magnetic deflector to change the glancing angle. Diffraction patterns were recorded on a laser video disc, via a television camera, at each glancing angle. The results observed during growth with the sample held at 250 degrees C under a "one beam condition" were compared to a calculated curve, derived from the surface morphology at each growth stage which had been measured with scanning tunneling microscopy. The experimental data are not in good agreement with calculated curves. Better agreement is obtained when the presence of a two-dimensional atomic Si gas is taken into consideration. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:313 / 317
页数:5
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