SCANNING-TUNNELING-MICROSCOPY STUDY OF SURFACE-MORPHOLOGY AT THE INITIAL GROWTH STAGE OF SI ON A 7X7 SUPERLATTICE SURFACE OF SI(111)

被引:35
作者
SHIGETA, Y [1 ]
ENDO, J [1 ]
MAKI, K [1 ]
机构
[1] YOKOHAMA CITY UNIV,GRAD SCH INTEGRATED SCI,YOKOHAMA,KANAGAWA 232,JAPAN
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 03期
关键词
D O I
10.1103/PhysRevB.51.2021
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Scanning-tunneling-microscopy (STM) images were taken from the surface of a Si layer grown at a rate of 0.6 nm/min on a Si(111)-7×7 substrate held at 250°C in order to study the surface morphology change in terms of the thin-film-growth process. Each STM image was obtained from the Si layer whose growth was terminated at an arbitrary value of the specular reflected high-energy electron-beam intensity (I). At the initial growth stage on the native Si(111)-7×7 substrate, the amplitude of I does not oscillate regularly, and three-dimensional (3D) islands nucleate and grow layer by layer. When a second bilayer has a mean thickness between 13/4 and 21/4 bilayers, the layer growth starts with the nucleation and growth of 2D islands, and is followed by regular oscillation in I. The transition from a 3D to a 2D growth mode can be deduced from the difference in the nucleation and growth processes of islands on the native Si(111)-7×7 substrate and the growing Si layer; this is because the latter surface is composed of small domains with metastable 2×1, 2×2, 5×5, 7×7, and 9×9 superlattices. © 1995 The American Physical Society.
引用
收藏
页码:2021 / 2024
页数:4
相关论文
共 15 条
[1]   MONOLAYER AND BILAYER GROWTH ON GE(111) AND SI(111) [J].
AARTS, J ;
LARSEN, PK .
SURFACE SCIENCE, 1987, 188 (03) :391-401
[2]   NUCLEATION AND GROWTH DURING MOLECULAR-BEAM EPITAXY (MBE) OF SI ON SI(111) [J].
ALTSINGER, R ;
BUSCH, H ;
HORN, M ;
HENZLER, M .
SURFACE SCIENCE, 1988, 200 (2-3) :235-246
[3]   LIMITING THICKNESS HEPI FOR EPITAXIAL-GROWTH AND ROOM-TEMPERATURE SI GROWTH ON SI(100) [J].
EAGLESHAM, DJ ;
GOSSMANN, HJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 65 (10) :1227-1230
[4]   REAL-SPACE OBSERVATION OF PI-BONDED CHAINS AND SURFACE DISORDER ON SI(111)2X1 [J].
FEENSTRA, RM ;
THOMPSON, WA ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1986, 56 (06) :608-611
[5]   OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].
ICHIKAWA, M ;
DOI, T .
APPLIED PHYSICS LETTERS, 1987, 50 (17) :1141-1143
[6]  
KOHLER U, 1989, J VAC SCI TECHNOL A, V7, P2860, DOI 10.1116/1.576159
[7]   CRITICAL THICKNESS FOR GROWTH OF EPITAXIAL GRAINS IN SILICON FILM DEPOSITED ON SUPERLATTICE SURFACE OF SILICON (111) [J].
MAKI, K ;
SHIGETA, Y ;
KURODA, T .
JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :567-571
[8]   STRUCTURAL STUDY OF SI GROWTH ON A SI(111) 7X7 SURFACE [J].
NAKAHARA, H ;
ICHIMIYA, A .
SURFACE SCIENCE, 1991, 241 (1-2) :124-134
[9]   INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH [J].
SAKAMOTO, T ;
KAWAI, NJ ;
NAKAGAWA, T ;
OHTA, K ;
KOJIMA, T .
APPLIED PHYSICS LETTERS, 1985, 47 (06) :617-619
[10]   ANNEALING EFFECT ON AN AMORPHOUS SI FILM DEPOSITED ON A 7X7 SUPERLATTICE SURFACE OF SI(111) STUDIED WITH LOW-ENERGY-ELECTRON DIFFRACTION [J].
SHIGETA, Y ;
MAKI, K .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) :5033-5039