Effects of target bias voltage on indium tin oxide films deposited by high target utilisation sputtering

被引：13

作者：

Calnan, Sonya ^{[1
]}

Upadhyaya, Hani M.

Dann, Sandra E.

Thwaites, Mike J.

Tiwari, Ayodhya N.

机构：

[1] Loughborough Univ, Dept Elect & Elect Engn, Ctr Renewable Energy Syst Technol, Loughborough LE11 3TU, Leics, England

[2] Loughborough Univ, Dept Chem, Loughborough LE11 3TU, Leics, England

[3] Plasma Quest Ltd, Hook RG27 9UT, England

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 24期

基金：

英国工程与自然科学研究理事会;

关键词：

indium tin oxide; polyimide; target bias; sputtering; thin films;

D O I：

10.1016/j.tsf.2007.03.124

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) films were deposited by reactive High Target Utilisation Sputtering (HiTUS) onto glass and polyimide substrates. The ion plasma was generated by an RF power source while the target bias voltage was varied from 300 V to 500 V using a separate DC power supply. The deposition rate, at constant target power, increased with DC target voltage due to increased ion energy reaching 34 nm/min at 500 V All the films were polycrystalline and showed strong (400) and (222) reflections with the relative strength of latter increasing with target bias voltage. The resistivitv was lowest at 500 V with values of 1.8 x 10(-4) Omega cm and 2.4 x 10(-4) Omega cm on glass and polyimide, respectively but was still less than 5 x 10(-4) Q cm at 400 V. All films were highly transparent to visible light, (> 80%) but the NIR transmittance decreased with increasing target voltage due to higher free carrier absorption. Therefore, ITO films can be deposited onto semiconductor layers such as in solar cells, with minimal ion damage while maintaining low resistivity. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8500 / 8504

页数：5

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