Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

The formation mechanisms of GaN nanowires grown on a SixNy amorphous interlayer within a self-induced approach by molecular beam epitaxy have been investigated by combining in situ reflection high-energy electron-diffraction measurements with ex situ high-resolution transmission electron microscopy imaging. It is found that GaN initially nucleates as spherical cap-shaped islands with a wetting angle of 42 +/- 7 degrees. Subsequently, these islands coarsen and undergo a shape transition toward the nanowire morphology at an experimental critical radius of 5 nm. As the epitaxial constraint is very weak on an amorphous interlayer, the equivalent Laplace pressure due to the effects of surface stress has been taken into account. Analytical and finite-element method calculations show that the Laplace pressure results at the nanoscale dimensions in significant volume elastic strain in both spherical caps and nanowires. From thermodynamic considerations, it is revealed that the related strain energy density is slightly in favor of the shape transition toward the nanowire geometry owing to its higher ability to relieve the strain. Nevertheless, the anisotropy of surface energy is an even stronger driving force, since the nanowires are composed of c- and m-planes with very low surface energies. It is deduced that an energy barrier does exit for the shape transition and may be related to edge effects, resulting in a growth condition-dependent critical radius.