New γ-In2Se3/TCO (SnO2 or ZnO) thin film rectifying heterojunction

Rectifying contacts gamma-In2Se3/TCO (SnO2 or ZnO) were fabricated by using a very simple and cheap technique called 'solid state reaction between the constituents sequentially deposited in thin film form'. With this technique, monophasic gamma-In2Se3 was easily obtained. (I-V) and (C-V) measurements give consistent barrier height, i.e., q phi(b) = 0.85 eV and 0.70 eV with SnO2 and ZnO respectively. The frequency dependence of the capacitance may be attributed to trapping states. The temperature dependence of the saturation current and the small value of the ideality factor n (1.01 < n < 1.2) demonstrate that the current is predominantly thermionic. (C) 1998 Elsevier Science S.A.