Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

被引：134

作者：

Kaczer, B ^{[1
]}

Arkhipov, V ^{[1
]}

Degraeve, R ^{[1
]}

Collaert, N ^{[1
]}

Groeseneken, G ^{[1
]}

Goodwin, M ^{[1
]}

机构：

[1] IMEC, B-3001 Heverlee, Belgium

来源：

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年

关键词：

D O I：

10.1109/RELPHY.2005.1493117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model for NBTI is proposed based on disorder-controlled diffusion and drift in amorphous dielectrics. Experimental data on FinFETs confirm all major predictions of the model: temperature dependence of the NBTI exponent, non-Arrhenius behavior of NBTI log(t) and electric field dependences of recovery. Experimental challenges with determining NBTI parameters are also highlighted.

引用

页码：381 / 387

页数：7

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