Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states

被引：7

作者：

Gao Hai-Xia ^{[1
]}

Hu Rong ^{[1
]}

Yang Yin-Tang ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2011年 / 20卷 / 11期

关键词：

modeling; ZnO thin film transistor; deep state; band tail; SIMULATION; SILICON; DEVICE;

D O I：

10.1088/1674-1056/20/11/116803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a model of the carrier transport and the subgap density of states in a polycrystalline ZnO film for simulating a polycrystalline ZnO thin film transistor. This simple model considering the deep and the band tail states reproduces well the characteristics of polycrystalline ZnO thin film transistors. Furthermore, using the developed model, we study the effects of defect parameters on the electrical performances of the polycrystalline ZnO thin film transistors.

引用

页数：5

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