Analysis of Hump Characteristics in Thin-Film Transistors With ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures

被引：62

作者：

Furuta, Mamoru ^{[1
]}

Kamada, Yudai ^{[2
]}

Kimura, Mutsumi ^{[3
]}

Hiramatsu, Takahiro ^{[1
]}

Matsuda, Tokiyoshi ^{[1
]}

Furuta, Hiroshi ^{[1
]}

Li, Chaoyang ^{[1
]}

Fujita, Shizuo ^{[2
]}

Hirao, Takashi ^{[1
]}

机构：

[1] Kochi Univ Technol, Res Inst Nanodevices, Kochi 7828502, Japan

[2] Kyoto Univ, Grad Sch Engn, Kyoto 6158530, Japan

[3] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期

关键词：

Hump characteristics; intrinsic defects; sputtering; thermal desorption spectroscopy (TDS); thin-film transistors (TFTs); trap density; zinc oxide; DEFECTS; LAYER;

D O I：

10.1109/LED.2010.2068276

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties of thin-film transistors (TFTs) with ZnO channels which were deposited by radio-frequency magnetron sputtering at various oxygen partial pressures [p(O-2)] are investigated. A negative shift of the turn-on voltage with a "hump" was observed, and donorlike traps were generated at intermediate energy levels from the conduction band when the ZnO channel was deposited at p(O-2) below a critical pressure. Thermal desorption spectroscopy study revealed that the donorlike traps were generated when the ZnO film changed from O- to Zn-rich condition. The Zn-related native defects would be a possible origin of the donorlike traps generated at intermediate energy levels in the ZnO TFTs.

引用

收藏

页码：1257 / 1259

页数：3

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