12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors

被引：67

作者：

Jeong, Jae Kyeong ^{[1
]}

Jeong, Jong Han ^{[1
]}

Yang, Hui Won ^{[1
]}

Ahn, Tae Kyung ^{[1
]}

Kim, Minkyu ^{[1
]}

Kim, Kwang Suk ^{[1
]}

Gu, Bon Seog ^{[1
]}

Chung, Hyun-Joong ^{[1
]}

Park, Jin -Seong ^{[1
]}

Mo, Yeon-Gon ^{[1
]}

Kim, Hye Dong ^{[1
]}

Chung, Ho Kyoon ^{[1
]}

机构：

[1] Samsung SDI Co Ltd, Corp R&D Ctr, Yongin 449902, Gyeonggi Do, South Korea

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2009年 / 17卷 / 02期

关键词：

Oxide TFT; PIXEL;

D O I：

10.1889/JSID17.2.95

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A full-color 12.1-in. WXGA active-matrix organic-light-emitting-diode (AMOLED) display was, for the first time, demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an active-matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well-known pixel non-uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n-channel a-IGZO TFTs exhibited a field-effect mobility of 17 cm(2)/V-sec, threshold voltage of 1.1 V, on/off ratio > 10(9), and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a-IGZO TFT array is promising for large-sized applications such as notebook PCs and HDTVs because the a-IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system.

引用

页码：95 / 100

页数：6

共 17 条

[1] Investigating the stability of zinc oxide thin film transistors [J].

Cross, R. B. M. ;

De Souza, M. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[2] Stability of transparent zinc tin oxide transistors under bias stress [J].

Goerrn, P. ;

Hoelzer, P. ;

Riedl, T. ;

Kowalsky, W. ;

Wang, J. ;

Weimann, T. ;

Hinze, P. ;

Kipp, S. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[3] Bias-induced threshold voltages shifts in thin-film organic transistors [J].

Gomes, HL ;

Stallinga, P ;

Dinelli, F ;

Murgia, M ;

Biscarini, F ;

de Leeuw, DM ;

Muck, T ;

Geurts, J ;

Molenkamp, LW ;

Wagner, V .

APPLIED PHYSICS LETTERS, 2004, 84 (16) :3184-3186

[4] Flexible full-color AMOLED on ultrathin metal foil [J].

Jeong, Jae Kyeong ;

Jin, Dong Un ;

Shin, Hyun Soo ;

Lee, Hun Jung ;

Kim, Minkyu ;

Ahn, Tae Kyung ;

Lee, Jaeseob ;

Mo, Yeon Gon ;

Chung, Ho Kyun .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (05) :389-391

[5]

JEONG JK, 2007, P IMID DAEG KOR, P145

[6] Origin of subthreshold swing improvement in amorphous indium gallium zinc oxide transistors [J].

Jeong, Jong Han ;

Yang, Hui Won ;

Park, Jin-Seong ;

Jeong, Jae Kyeong ;

Mo, Yeon-Gon ;

Kim, Hye Dong ;

Song, Jaewon ;

Hwang, Cheol Seong .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (06) :H157-H159

[7] A new voltage-modulated AMOLED pixel design compensating for threshold voltage variation in poly-Si TFTs [J].

Jung, SH ;

Nam, WJ ;

Han, MK .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (10) :690-692

[8] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[9]

LEE HN, 2007, P IDW, P663

[10] A new poly-Si TFT current-mirror pixel for active matrix organic light emitting diode [J].

Lee, Jae-Hoon ;

Nam, Woo-Jin ;

Kim, Byeong-Koo ;

Choi, Hong-Seok ;

Ha, Yong-Min ;

Han, Min-Koo .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (10) :830-833

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