Oxygen bombardment effects on average crystallite size of sputter-deposited ZnO films

被引：35

作者：

Furuta, Mamoru ^{[1
,2
]}

Hiramatsu, Takahiro ^{[2
,3
]}

Matsuda, Tokiyoshi ^{[1
,2
]}

Li, Chaoyang ^{[1
,2
]}

Furuta, Hiroshi ^{[1
,2
]}

Hirao, Takashi ^{[1
,2
]}

机构：

[1] Kochi Univ Technol, Kochi 7828502, Japan

[2] Kochi Ind Promot Ctr, Kochi 7828502, Japan

[3] Kochi Casio Co Ltd, Nanko Ku, Kochi 7830062, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 17期

基金：

日本科学技术振兴机构;

关键词：

amorphous semiconductors; II-VI semiconductors; diffraction and scattering measurements; X-ray diffraction; films and coatings; sputtering; measurement techniques; optical spectroscopy; microstructure; microcrystallinity; special glasses and materials; indium tin oxide and other transparent conductors; X-rays;

D O I：

10.1016/j.jnoncrysol.2007.10.024

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zinc oxide (ZnO) film was deposited on a glass substrate by rf magnetron sputtering with O-2/Ar as working gases. Structural properties of the films were characterized by XRD. Average crystallite size in the films was strongly dependent on both the gas flow ratio of O-2/Ar and rf-power at a constant deposition pressure. During the deposition, energetic species in the plasma were in situ monitored using optical emission spectroscopy. An inverse correlation was observed between the average crystallite size and the emission intensity ratio of I-o*/I-Ar. Bombardment of atomic oxygen to the growing surface played an important role in determining the average crystallite size in the films. The average crystallite size could be controlled by the emission intensity ratio of I-o*/I-Ar. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1926 / 1931

页数：6

共 17 条

[1] ZnO synthesis by high vacuum plasma-assisted chemical vapor deposition using dimethylzinc and atomic oxygen [J].