Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

被引：19

作者：

Furuta, Mamoru ^{[1
]}

Nakanishi, Takashi ^{[2
]}

Kimura, Mutsumi ^{[2
]}

Hiramatsu, Takahiro ^{[1
]}

Matsuda, Tokiyoshi ^{[1
]}

Furuta, Hiroshi ^{[1
]}

Kawaharamura, Toshiyuki ^{[1
]}

Li, Chaoyang ^{[1
]}

Hirao, Takashi ^{[1
]}

机构：

[1] Kochi Univ Technol, Res Inst NanoDevices, Kochi 7828502, Japan

[2] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 04期

关键词：

STABILITY; PERFORMANCE; FABRICATION; DISPLAY; TFTS; SIZE;

D O I：

10.1149/1.3290741

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effect of interface treatment of ZnO/gate insulator on the variations in both the electrical properties and the trap density of bottom-gate ZnO thin film transistors (TFTs) were investigated. Two kinds of interface treatments, as a diluted HF wet treatment and a nitrous oxide (N(2)O) plasma treatment, are individually applied to the gate-insulator surface of the ZnO TFTs. The threshold voltage uniformity of ZnO TFTs with the N(2)O plasma-treated gate insulator was drastically improved. The trap densities extracted from the ZnO TFTs revealed that the variation in the trap density in deep energy level is reduced significantly by the N(2)O plasma treatment. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3290741] All rights reserved.

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页码：H101 / H104

页数：4

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