Thermal Stability and Sheet Resistance of Undoped ZnO Films Deposited on Insulators

被引：7

作者：

Furuta, Mamoru ^{[1
]}

Hiramatsu, Takahiro ^{[1
]}

Matsuda, Tokiyoshi ^{[1
]}

Li, Chaoyang ^{[1
]}

Furuta, Hiroshi ^{[1
]}

Hirao, Takashi ^{[1
]}

机构：

[1] Kochi Univ Technol, Res Inst Nanodevices, Kochi 7828502, Japan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 12期

基金：

日本科学技术振兴机构;

关键词：

TRANSISTORS; BOMBARDMENT; TFTS;

D O I：

10.1149/1.3238481

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The thermal stability of undoped ZnO films on various insulators such as SiNx, SiOx, and SiOx/SiNx was investigated by thermal desorption spectroscopy. O-2 desorption was observed from all films at temperatures ranging from 300 to 350 degrees C. The crystallinity of the ZnO films was influenced by the insulators and strongly affected the desorption temperature of O-2. The sheet resistance (R-s) of the film is susceptible to O-2 desorption, and the Rs drastically fell over 7 orders of magnitude as O-2 desorbed. The R-s of ZnO/SiOx/SiNx and ZnO/SiOx were more stable than that of ZnO/SiNx; thus, these are suitable for use in thin-film transistors. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3238481] All rights reserved.

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收藏

页码：K74 / K76

页数：3

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