Effect of hydrogen in zinc oxide thin-film transistor grown by metal organic chemical vapor deposition

被引：29

作者：

Jo, Jungyol ^{[1
]}

Seo, Ogweon

Jeong, Euihyuk

Seo, Hyunseok

Lee, Byeongon

Choi, Yearn-Ik

机构：

[1] Ajou Univ, Dept Elect & Comp Engn, Suwon 441749, South Korea

[2] Samsung Adv Inst Technol, NFC, Suwon 440600, South Korea

[3] CDA Co Ltd, Seoul 137893, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

ZnO; thin-film transistor; MOCVD; hydrogen; ZNO; MOBILITY;

D O I：

10.1143/JJAP.46.2493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the transport characteristics of ZnO grown by metal organic chemical vapor deposition (MOCVD) at temperatures between 200 and 500 degrees C. The crystal quality, measured by X-ray diffraction, improved as the growth temperature increased. However, the mobility measured in the thin-film transistor (TFIF) decreased in films grown at higher temperatures. In our experiments, a ZnO TFT grown at 250 degrees C showed good electrical characteristics, with a 13 cm(2) V-1 s(-1) mobility and a 103 on/off ratio. We conclude that hydrogen incorporated during MOCVD growth plays an important role in determining the transistor characteristics. This was. supported by results of secondary ion mass spectroscopy (SIMS), where a higher hydrogen concentration was observed in films grown at lower temperatures.

引用

页码：2493 / 2495

页数：3

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