Thermal Analysis of Degradation in Ga2O3-In2O3-ZnO Thin-Film Transistors

被引：75

作者：

Fujii, Mami ^{[1
]}

Yano, Hiroshi ^{[1
]}

Hatayama, Tomoaki ^{[1
]}

Uraoka, Yukiharu ^{[1
]}

Fuyuki, Takashi ^{[1
]}

Jung, Ji Sim ^{[2
]}

Kwon, Jang Yeon ^{[2
]}

机构：

[1] Nara Inst Sci & Technol, Nara 6300192, Japan

[2] Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 08期

关键词：

thin film transistor; Ga2O3-In2O3-ZnO; reliability; degradation; threshold voltage stress; recovery;

D O I：

10.1143/JJAP.47.6236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Degradation of Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs), which are promising for driving circuits of next-generation displays. was studied. We found a degradation mode that was not observed in silicon TFTs. A parallel shift without any change of the transfer curve was observed under gate voltage stress. Judging from the bias voltage dependences we confirmed that the mode was mainly dominated by a vertical electric field. Thermal distribution was measured to analysis the degradation mechanism. Joule heating caused by drain current was observed; however, a marked acceleration of degradation by drain bias was not found. Therefore, we concluded that Joule heating did not accelerate degradation. Recovery of electrical properties independent of stress voltage were observed.

引用

页码：6236 / 6240

页数：5

共 13 条

[1] Investigating the stability of zinc oxide thin film transistors [J].