Trap densities in amorphous-InGaZnO4 thin-film transistors

被引：281

作者：

Kimura, Mutsumi ^{[1
]}

Nakanishi, Takashi ^{[1
]}

Nomura, Kenji ^{[2
]}

Kamiya, Toshio ^{[2
]}

Hosono, Hideo ^{[2
]}

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 13期

关键词：

D O I：

10.1063/1.2904704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Trap densities in amorphous-InGaZnO(4) (alpha-IGZO) are extracted directly from the capacitance-voltage characteristics of thin-film transistors at low frequencies. It is found that the trap densities are flat in the energy gap, and are 1.7x10(16) cm(-3) eV(-1) in the deep energy far from the conduction band edge (E(c)), but become larger near E(c). Moreover, postannealing reduces the trap density near E(c), which is associated with the reduction of the hysteresis in the current-voltage characteristics. The annealed alpha-IGZO does not have a Gaussian-type state and has fewer tail states than amorphous Si. (C) 2008 American Institute of Physics.

引用

页数：3

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