Two-dimensional, electrostatic finite element study of tip-substrate interactions in electric force microscopy of high density inter-connect structures

被引：13

作者：

Gross, TS ^{[1
]}

Prindle, CM

Chamberlin, K

bin Kamsah, N

Wu, YY

机构：

[1] Univ New Hampshire, Dept Mech Engn, Durham, NH 03824 USA

[2] Univ New Hampshire, Dept Elect & Comp Engn, Durham, NH 03824 USA

来源：

ULTRAMICROSCOPY | 2001年 / 87卷 / 03期

关键词：

electric force microscopy; EFM; finite element; FE; dielectric thin films; interconnect;

D O I：

10.1016/S0304-3991(00)00093-0

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Two-dimensional electrostatic finite element modeling is used to estimate the variation of tip force as a function of potential, dielectric film thickness, and tip-substrate spacing when imaging using electric force microscopy. Blanket dielectric films and similar to 1000 nm thick interconnect structures were studied. We conclude that sidewall damage regions can be detected but will require special processing to make an unambiguous measurement. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：147 / 154

页数：8

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