Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy

被引：34

作者：

Droopad, R ^{[1
]}

Yu, Z ^{[1
]}

Ramdani, J ^{[1
]}

Hilt, L ^{[1
]}

Curless, J ^{[1
]}

Overgaard, C ^{[1
]}

Edwards, JL ^{[1
]}

Finder, J ^{[1
]}

Eisenbeiser, K ^{[1
]}

Ooms, W ^{[1
]}

机构：

[1] Motorola Labs, Phys Sci Res Labs, Tempe, AZ 85284 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 87卷 / 03期

关键词：

dielectric constant; epitaxial oxides; reflection high energy electron diffraction;

D O I：

10.1016/S0921-5107(01)00727-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of perovskite-type oxide SrTiO3 have been grown epitaxially on Si(001) substrates using molecular beam epitaxy. Using reflection high energy electron diffraction (RHEED) we have determined the optimum growth conditions for these type of oxides directly on silicon. Also, observations of RHEED during growth and X-ray diffraction (XRD) analysis indicate that high quality heteroepitaxy on Si takes place with SrTiO3(001)//Si(001) and SrTiO3[010]//Si[110]. Thin SrTiO3 layers grown directly on Si were used as the gate dielectric for the fabrication of MOSFET devices. An effective oxide thickness < 10 Angstrom has been obtained for a 110 Angstrom thick SrTiO3 dielectric film with the interface state density around 6.4 x 10(10) cm(-2) eV(-1), and the inversion layer carrier mobilities of 220 and 62 cm(2) V-1 s(-1) for NMOS and PMOS devices, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：292 / 296

页数：5

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