Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

被引：141

作者：

Esposto, Michele ^{[1
]}

Krishnamoorthy, Sriram ^{[1
]}

Nath, Digbijoy N. ^{[1
]}

Bajaj, Sanyam ^{[1
]}

Hung, Ting-Hsiang ^{[1
]}

Rajan, Siddharth ^{[1
]}

机构：

[1] Ohio State Univ, ECE Dept, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 13期

关键词：

alumina; capacitance; conduction bands; gallium compounds; III-V semiconductors; interface states; MIS capacitors; molecular beam epitaxial growth; nickel; plasma deposition; wide band gap semiconductors; FIELD-EFFECT TRANSISTORS; AL2O3;

D O I：

10.1063/1.3645616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60 x 10(12) cm(-2) at the Al2O3/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3645616]

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页数：3

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