Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

被引：93

作者：

Liu, Z. H. ^{[1
,2
]}

Ng, G. I. ^{[1
,2
]}

Arulkumaran, S. ^{[2
]}

Maung, Y. K. T. ^{[2
]}

Teo, K. L. ^{[2
]}

Foo, S. C. ^{[2
]}

Sahmuganathan, V. ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, MMIC Design Ctr, Temasek Labs, Singapore 637553, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 22期

关键词：

alumina; aluminium compounds; atomic layer deposition; dielectric materials; dielectric thin films; electrical resistivity; electron mobility; gallium compounds; high electron mobility transistors; III-V semiconductors; MISFET; passivation; semiconductor quantum wells; two-dimensional electron gas; wide band gap semiconductors; FIELD-EFFECT TRANSISTORS; OXIDE; HEMTS;

D O I：

10.1063/1.3268474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of Al2O3 gate insulator grown by atomic layer deposition (ALD) system on the two-dimensional electron gas (2DEG) transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) were investigated. The shape of the electron lateral distribution in the quantum well at AlGaN/GaN interface was found to be slightly influenced by the Al2O3 thin layer. The drift mobility (mu(d)) of the electrons in ALD-Al2O3/AlGaN/GaN MISHEMT is increased due to the surface passivation effects of the included dielectric layer. The higher dynamic channel current of the MISHEMT indicates that the electron saturation velocity (v(sat)) is also increased. These results show the improvement of the transport characteristics of 2DEG in Al2O3/AlGaN/GaN MISHEMT by the excellent properties of the Al2O3 grown by ALD.

引用

页数：3

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