Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)

被引：27

作者：

Arulkumaran, Subramaniam ^{[1
]}

Hong, Liu Zhi ^{[2
]}

Ing, Ng Geok ^{[2
]}

Selvaraj, Susai Lawrence ^{[3
]}

Egawa, Takashi ^{[3
]}

机构：

[1] Nanyang Technol Univ, Temasek Labs, Monolith Microwave Integrated Circuit Design Ctr, Singapore 637553, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 03期

关键词：

FIELD-EFFECT TRANSISTORS; CURRENT COLLAPSE; HETEROSTRUCTURE; ALN;

D O I：

10.1143/APEX.2.031001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of ammonia (NH3) in the plasma enhanced chemical vapor deposited (PECVD) SiN on the performance of SiN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) were studied by measuring dc, small signal, current collapse, and breakdown voltage (BVgd) characteristics. The MIS-HEMTs with SiN (NH3-SiN) deposited using NH3 and SiH4 exhibited better device performances when compared to AlGaN/GaN HEMTs and MIS-HEMTs with SiN deposited using N-2 and SiH4 (NH3-free SiN). Due to the low gate-leakage current, enhanced BVgd was observed on both NH3-SiN (27.4%) MIS-HEMTs and NH3-free-SiN (13.7%) MIS-HEMTs when compared to HEMTs. The enhancement of cut-off frequency (f(T)) and suppression of drain current collapse were also observed on both types of SiN/AlGaN/GaN MIS-HEMTs. The improved device characteristics of MIS-HEMTs are possibly due to the formation of good quality interface between NH3-SiN and AlGaN. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.031001

引用

页数：3

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