A realization of low-distortion CMOS transconductance amplifier

被引:16
作者
Morozov, DV [1 ]
Korotkov, AS [1 ]
机构
[1] St Petersburg State Tech Univ, Dept Elect & Telecommun Engn, St Petersburg 195251, Russia
来源
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS | 2001年 / 48卷 / 09期
关键词
compensation technique; harmonic distortion; transconductor; triode region;
D O I
10.1109/81.948443
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new CMOS transconductance amplifier with low-harmonic distortion is proposed. The used technique is based on the parallel connection of two amplifiers. The first transconductor is working in the triode region, the other one is in the saturation. Compared to the known method, the realization of the discussed circuit provides a good value of G(m)/I parameter and lower power consumption. An estimation indicates that 15% power saving can be achieved. A special current-biasing block and large size MOS transistors will not be required. The results of the theoretical analysis as well as the results of the computer simulations are presented.
引用
收藏
页码:1138 / 1141
页数:4
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