Influence of the ion irradiation on the properties of beta-FeSi2 layers prepared by ion beam assisted deposition

被引：4

作者：

Barradas, NP ^{[1
]}

Panknin, D ^{[1
]}

Wieser, E ^{[1
]}

Schmidt, B ^{[1
]}

Betzl, M ^{[1
]}

Mucklich, A ^{[1
]}

Skorupa, W ^{[1
]}

机构：

[1] ROSSENDORF INC,FORSCHUNGSZENTRUM ROSSENDORF EV,INST IONENSTRAHLPHYS & MAT FORSCH,D-01314 DRESDEN,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 127卷

关键词：

D O I：

10.1016/S0168-583X(96)00947-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 [仪器科学与技术]; 080401 [精密仪器及机械]; 081102 [检测技术与自动化装置];

摘要：

beta-FeSi2 layers on Si substrates were produced by ion beam assisted deposition (IBAD). The influence of the deposition parameters on the structure was studied by Rutherford backscattering, X-ray diffraction, cross-section transmission electron microscopy, and scanning electron microscopy, The layers grow in a columnar way with pin-holes and their surface is rough. An IBAD process with low Ar energy (E-Ar = 200 eV) and low Ar ion to Fe atom ratio (I-Ar/A(Fe) = 0.15) improves the layer structure in comparison to samples prepared without Ar irradiation. Less pin-holes are formed, and the roughness shows a minimum. The roughness increases for larger values of E-Ar or I-Ar/A(Fe). All samples are polycrystalline but with a pronounced texture. The preferential orientation FeSi2(110,101)parallel to Si(001), with a few degrees misorientation, is found. This preferred grain orientation is also enhanced by the IBAD process, Hall effect measurements were done and the I-V characteristics of the samples were measured. The results are discussed in relation with the influence of the ion beam.

引用

页码：316 / 320

页数：5

共 19 条

[1]

A CLARIFICATION OF THE INDEX OF REFRACTION OF BETA-IRON DISILICIDE [J].