A highly reliable ferroelectric memory technology with SrBi2Ta2O9-based material and metal covering cell structure

被引：5

作者：

Fujii, E ^{[1
]}

Judai, Y

Ito, T

Kutsunai, T

Nagano, Y

Noma, A

Nasu, T

Izutsu, Y

Mikawa, T

Yasuoka, H

Azuma, M

Shimada, Y

Sasai, Y

Sato, K

Otsuki, T

机构：

[1] Matsushita Elect Corp, Semicond Co, ULSI Proc Technol Dev Ctr, Kyoto 6018413, Japan

[2] Matsushita Elect Corp, Semicond Device Res Ctr, Osaka 5691193, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 06期

关键词：

ferroelectric memory; multilevel; plasma silicon nitride; reliability;

D O I：

10.1109/16.925253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multilevel metal process-based highly reliable ferroelectric memory (FeRAM) has been developed. Highly reliable characteristics have been attained by two techniques. One is a newly developed ferroelectric material with mixed superlattice crystal of SrBi2(Ta-x,Nb1-x)(2)O-9 and Bi-2(Ta-x,Nb1-x)O-6, which provides an elevated remnant polarization while keeping a low coercive voltage, The other is a metal;covering memory cell structure which makes the use of plasma silicon nitride (p-SiN) passivation possible without reduction of the ferroelectric thin film by a hydrogen plasma during p-SiN deposition, which results in no degradation of the characteristics of cell capacitors. The FeRAM cell capacitors with the above newly developed ferroelectric material and metal covering structure have been fabricated by using a 0.6-mu double level metal process, The fabricated cell capacitors show highly reliable characteristics such as the ensured retention of data written at a law voltage of 2.4 V and humidity resistance for 10 y under a high temperature of 70 degreesC,which is promising for commercialization of FeRAM and its embedded LSIs.

引用

页码：1231 / 1236

页数：6

共 16 条

[1] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].

DEARAUJO, CAP ;

CUCHIARO, JD ;

MCMILLAN, LD ;

SCOTT, MC ;

SCOTT, JF .

NATURE, 1995, 374 (6523) :627-629

[2] FATIGUE-FREE SRBI2(TAXNB1-X)(2)O-9 FERROELECTRIC THIN-FILMS [J].

DESU, SB ;

LI, TK .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 34 (01) :L4-L8

[3] NOVEL FATIGUE-FREE LAYERED STRUCTURE FERROELECTRIC THIN-FILMS [J].

DESU, SB ;

VIJAY, DP .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 32 (1-2) :75-81

[4]

Eaton S. S., 1988, 1988 IEEE INT SOL ST, P130

[5] Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family) [J].

Fujii, E ;

Otsuki, T ;

Judai, Y ;

Shimada, Y ;

Azuma, M ;

Uemoto, Y ;

Nagano, Y ;

Nasu, T ;

Izutsu, Y ;

Matsuda, A ;

Nakao, K ;

Tanaka, K ;

Hirano, K ;

Ito, T ;

Mikawa, T ;

Kutsunai, T ;

McMillan, LD ;

de Araujo, CAP .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :597-600

[6] Analysis of the degradation of PZT and SrBi2Ta2O9 thin films with a reductive process [J].

Hase, T ;

Noguchi, T ;

Miyasaka, Y .

INTEGRATED FERROELECTRICS, 1997, 16 (1-4) :29-40

[7]

Jung D. J., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P279, DOI 10.1109/IEDM.1999.824151

[8] Voltage shift effect on retention failure in ferroelectric memories [J].

Nakao, K ;

Judai, Y ;

Azuma, M ;

Shimada, Y ;

Otsuki, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9B) :5203-5206

[9]

Nakura T., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P801, DOI 10.1109/IEDM.1999.824271

[10]

NISHI Y, 1981, SILICON INTEGRATED A, P121

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