Carrier relaxation dynamics for As defects in GaN

被引：9

作者：

Gil, B

Morel, A

Taliercio, T

Lefebvre, P

Foxon, CT

Harrison, I

Winser, AJ

Novikov, SV

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 5, France

[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[3] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 01期

关键词：

D O I：

10.1063/1.1380400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Long decay times in the 50-150 ns range have been measured for the characteristic blue photoluminescence that peaks at 2.6 eV in GaN:As. We interpret these long decay times according to the theoretical predictions that this blue photoluminescence is caused by the incorporation of arsenic on the gallium site. The long decay times are characteristics of the large lattice relaxation for such a deep donor with a negative-U center behavior. (C) 2001 American Institute of Physics.

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页码：69 / 71

页数：3

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